MT200

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MT200 family

In questo spazio dedicato al testo inserirei una descrizione della famiglia MT200, in più una descrizione all’utente in cui si spiega che esistono più versioni di sistemi che l’azienda produce che soddisfano varie situazioni. Lorem Ipsum is simply dummy text of the printing and typesetting industry. Lorem Ipsum has been the industry’s standard dummy text ever since the 1500s, when an unknown printer took a galley of type and scrambled it to make a type specimen book. It has survived not only five centuries, but also the leap into electronic typesetting, remaining essentially unchanged.

MT200 family

MT200 family of tester with its ranges of voltages and currents covers test requirement of static parameter from DIEs to complex configuration of modules. MT200 family add dynamic and combined parameters test that reach ranges up to 10 kV and 10 kA in the MT300 family, to satisfy strongest requirements of the market.

MT200S

Parameters

DC: 2800V - 3000A

Power points: 16

Gate points: 26

Sense points: 50

Target

Optional internal adapter

Sub-strate

Power discrete

Power module

Features

Monitor: touchscreen 21.5"

Dimension(cm): L160 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 2

Static test

_IGBT: I _CES V _CES I _GES I _CE(sat) g _fs V _GE(th)

_MOSFET: I _DSS V _(BR)DSS I _GSS I _DS(on) g _fs V _GS(th)

_DIODE: I _GR V _R V _F

_THYRISTOR: I _GT V _GT I _L I _H

_THERMISTOR: V _(th)

_SHUNT: V _(sh)

MT200S-HP

Parameters

DC: 2800V - 3000A

Power points: 16

Gate points: 26

Sense points: 50

Target

Optional internal adapter

Sub-strate

Power discrete

Power module

Features

Monitor: touchscreen 21.5"

Dimension(cm): L160 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 2

Static test

_IGBT: I _CES V _CES I _GES I _CE(sat) g _fs V _GE(th)

_MOSFET: I _DSS V _(BR)DSS I _GSS I _DS(on) g _fs V _GS(th)

_DIODE: I _GR V _R V _F

_THYRISTOR: I _GT V _GT I _L I _H

_THERMISTOR: V _(th)

_SHUNT: V _(sh)

MT200D

Parameters

DC: 2800V - 3000A

Power points: 16

Gate points: 26

Sense points: 50

Target

Optional internal adapter

Sub-strate

Power discrete

Power module

Features

Monitor: touchscreen 21.5"

Dimension(cm): L160 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 2

Dynamic - double pulse test, inductive load

IGBT: t_don t_r t_on t_doff t_f t_off t_z E_on E_off d_V/dt d_lc/dt Q_g
I_g(max) R_BSOA F_BSOA
FWD: d_lrf/dt d_lrr/dt V_R(max) I_R(max) t_rr Q_rr E_rec

Dynamic - single pulse test, clamped inductive load

IGBT: E_off t_d(off) t_f t_off d_V/dt Q_g I_g(max) R_BSOA

Dynamic - single pulse test, unclamped inductive load

MOSFET: E_as/dt I_off/dt V_DS(max) U_IS(single p_ulse a_valanche e_nergy t_est)

Dynamic - single pulse test, clamped inductive load

IGBT: V_CE(max) I_C(max)

MT200D-HW

Parameters

AC: 4500 V - 1000 A

Power points: 3

Gate points: 4

Sense points: 8

Target

Wafer die

Features

Monitor: touchscreen 21,5"

Dimension(cm): L160 W80 H180

Interface: CREA™ software plugin

Number of Cabinets: 2

Bandwidth: 350 MHz

Resolution: 12 bits

Sample rate: 2G/s

Short circuit (up to): 2000 A

Dynamic - double pulse test, inductive load

IGBT: t_don t_r t_on t_doff t_f t_off t_z E_on E_off d_V/dt d_lc/dt Q_g
I_g(max) R_BSOA F_BSOA
FWD: d_lrf/dt d_lrr/dt V_R(max) I_R(max) t_rr Q_rr E_rec

Dynamic - single pulse test, clamped inductive load

IGBT: E_off t_d(off) t_f t_off d_V/dt Q_g I_g(max) R_BSOA

Dynamic - single pulse test, unclamped inductive load

MOSFET: E_as/dt I_off/dt V_DS(max) U_IS(single p_ulse a_valanche e_nergy t_est)

Dynamic - single pulse test, clamped inductive load

IGBT: V_CE(max) I_C(max)

MT200DS

Parameters

DC: 2800V - 1500A

AC: 3000A - 4000A

Power points: 16

Gate points: 26

Sense points: 50

Target

Optional internal adapter

Substrate

Power discrete

Power module

Features

Monitor: touchscreen 21,5"

Dimension(cm): L160 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 2

Bandwidth: 350 MHz

Resolution: 12 bits

Sample rate: 2G/s

Short circuit (up to): 6000 A

Static test

IGBT: I_CES V_CES I_GES I_CE(sat) G_fs V_GE(th)
MOSFET: I_DSS V_(BR)DSS I_GSS I_DS(on) g_fs V_GS(th)

Dynamic - double pulse test, inductive load

IGBT: t_don t_r t_on t_doff t_f t_off t_z E_on E_off d_V/dt d_lc/dt Q_g
I_g(max) R_BSOA F_BSOA
FWD: d_lrf/dt d_lrr/dt V_R(max) I_R(max) t_rr Q_rr E_rec

Dynamic - single pulse test, clamped inductive load

IGBT: E_off t_d(off) t_f t_off d_V/dt Q_g I_g(max) R_BSOA

Dynamic - single pulse test, unclamped inductive load

MOSFET: E_as/dt I_off/dt V_DS(max) U_IS(single p_ulse a_valanche e_nergy t_est)

Dynamic - single pulse test, clamped inductive load

IGBT: V_CE(max) I_C(max)

MT200DS-HW

Parameters

DC: 10KV - 4500V

AC: 1000A - 1000A

Power points: 3

Gate points: 4

Sense points: 8

Target

Wafer die

Features

Monitor: touchscreen 21,5"

Dimension(cm): L160 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 2

Bandwidth: 350 MHz

Resolution: 12 bits

Sample rate: 2G/s

Short circuit (up to): 2000 A

Dynamic - double pulse test, inductive load

IGBT: t_don t_r t_on t_doff t_f t_off t_z E_on E_off d_V/dt d_lc/dt Q_g
I_g(max) R_BSOA F_BSOA
FWD: d_lrf/dt d_lrr/dt V_R(max) I_R(max) t_rr Q_rr E_rec

Dynamic - single pulse test, clamped inductive load

IGBT: E_off t_d(off) t_f t_off d_V/dt Q_g I_g(max) R_BSOA

Dynamic - single pulse test, unclamped inductive load

MOSFET: E_as/dt I_off/dt V_DS(max) U_IS(single p_ulse a_valanche e_nergy t_est)

Dynamic - single pulse test, clamped inductive load

IGBT: V_CE(max) I_C(max)

MT200S

Parameters

DC: 2800V - 3000A

Power points: 16

Gate points: 26

Sense points: 50

Target

Optional internal adapter

Sub-strate

Power discrete

Power module

Features

Monitor: touchscreen 21.5"

Dimension(cm): L160 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 2

Static test

_IGBT: I _CES V _CES I _GES I _CE(sat) g _fs V _GE(th)

_MOSFET: I _DSS V _(BR)DSS I _GSS I _DS(on) g _fs V _GS(th)

_DIODE: I _GR V _R V _F

_THYRISTOR: I _GT V _GT I _L I _H

_THERMISTOR: V _(th)

_SHUNT: V _(sh)

MT200S-HP

Parameters

DC: 2800V - 3000A

Power points: 16

Gate points: 26

Sense points: 50

Optional internal adapter

Sub-strate

Power discrete

Power module

Features

Monitor: touchscreen 21.5"

Dimension(cm): L160 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 2

Static test

_IGBT: I _CES V _CES I _GES I _CE(sat) g _fs V _GE(th)

_MOSFET: I _DSS V _(BR)DSS I _GSS I _DS(on) g _fs V _GS(th)

_DIODE: I _GR V _R V _F

_THYRISTOR: I _GT V _GT I _L I _H

_THERMISTOR: V _(th)

_SHUNT: V _(sh)

MT200D

Parameters

DC: 2800V - 3000A

Power points: 16

Gate points: 26

Sense points: 50

Optional internal adapter

Sub-strate

Power discrete

Power module

Features

Monitor: touchscreen 21.5"

Dimension(cm): L160 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 2

Dynamic - double pulse test, inductive load

IGBT: t_don t_r t_on t_doff t_f t_off t_z E_on E_off d_V/dt d_lc/dt Q_g
I_g(max) R_BSOA F_BSOA
FWD: d_lrf/dt d_lrr/dt V_R(max) I_R(max) t_rr Q_rr E_rec

Dynamic - single pulse test, clamped inductive load

IGBT: E_off t_d(off) t_f t_off d_V/dt Q_g I_g(max) R_BSOA

Dynamic - single pulse test, unclamped inductive load

MOSFET: E_as/dt I_off/dt V_DS(max) U_IS(single p_ulse a_valanche e_nergy t_est)

Dynamic - single pulse test, clamped inductive load

IGBT: V_CE(max) I_C(max)

MT200D-HW

Parameters

AC: 4500 V - 1000 A

Power points: 3

Gate points: 4

Sense points: 8

Wafer die

Features

Monitor: touchscreen 21,5"

Dimension(cm): L160 W80 H180

Interface: CREA™ software plugin

Number of Cabinets: 2

Bandwidth: 350 MHz

Resolution: 12 bits

Sample rate: 2G/s

Short circuit (up to): 2000 A

Dynamic - double pulse test, inductive load

IGBT: t_don t_r t_on t_doff t_f t_off t_z E_on E_off d_V/dt d_lc/dt Q_g
I_g(max) R_BSOA F_BSOA
FWD: d_lrf/dt d_lrr/dt V_R(max) I_R(max) t_rr Q_rr E_rec

Dynamic - single pulse test, clamped inductive load

IGBT: E_off t_d(off) t_f t_off d_V/dt Q_g I_g(max) R_BSOA

Dynamic - single pulse test, unclamped inductive load

MOSFET: E_as/dt I_off/dt V_DS(max) U_IS(single p_ulse a_valanche e_nergy t_est)

Dynamic - single pulse test, clamped inductive load

IGBT: V_CE(max) I_C(max)

MT200DS

Parameters

DC: 2800V - 1500A

AC: 3000A - 4000A

Power points: 16

Gate points: 26

Sense points: 50

Optional internal adapter

Substrate

Power discrete

Power module

Features

Monitor: touchscreen 21,5"

Dimension(cm): L160 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 2

Bandwidth: 350 MHz

Resolution: 12 bits

Sample rate: 2G/s

Short circuit (up to): 6000 A

Static test

IGBT: I_CES V_CES I_GES I_CE(sat) G_fs V_GE(th)
MOSFET: I_DSS V_(BR)DSS I_GSS I_DS(on) g_fs V_GS(th)

Dynamic - double pulse test, inductive load

IGBT: t_don t_r t_on t_doff t_f t_off t_z E_on E_off d_V/dt d_lc/dt Q_g
I_g(max) R_BSOA F_BSOA
FWD: d_lrf/dt d_lrr/dt V_R(max) I_R(max) t_rr Q_rr E_rec

Dynamic - single pulse test, clamped inductive load

IGBT: E_off t_d(off) t_f t_off d_V/dt Q_g I_g(max) R_BSOA

Dynamic - single pulse test, unclamped inductive load

MOSFET: E_as/dt I_off/dt V_DS(max) U_IS(single p_ulse a_valanche e_nergy t_est)

Dynamic - single pulse test, clamped inductive load

IGBT: V_CE(max) I_C(max)

MT200DS-HW

Parameters

DC: 10KV - 4500V

AC: 1000A - 1000A

Power points: 3

Gate points: 4

Sense points: 8

Wafer die

Features

Monitor: touchscreen 21,5"

Dimension(cm): L160 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 2

Bandwidth: 350 MHz

Resolution: 12 bits

Sample rate: 2G/s

Short circuit (up to): 2000 A

Dynamic - double pulse test, inductive load

IGBT: t_don t_r t_on t_doff t_f t_off t_z E_on E_off d_V/dt d_lc/dt Q_g
I_g(max) R_BSOA F_BSOA
FWD: d_lrf/dt d_lrr/dt V_R(max) I_R(max) t_rr Q_rr E_rec

Dynamic - single pulse test, clamped inductive load

IGBT: E_off t_d(off) t_f t_off d_V/dt Q_g I_g(max) R_BSOA

Dynamic - single pulse test, unclamped inductive load

MOSFET: E_as/dt I_off/dt V_DS(max) U_IS(single p_ulse a_valanche e_nergy t_est)

Dynamic - single pulse test, clamped inductive load

IGBT: V_CE(max) I_C(max)

MT100

MT200

MT300

Fixture

Adapter

Technology

MT100

MT200

MT300

Fixture

Adapter

Technology

MT200 family

MT200 family