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MT100 family

In questo spazio dedicato al testo inserirei una descrizione della famiglia MT100, in più una descrizione all’utente in cui si spiega che esistono più versioni di sistemi che l’azienda produce che soddisfano varie situazioni. Lorem Ipsum is simply dummy text of the printing and typesetting industry. Lorem Ipsum has been the industry’s standard dummy text ever since the 1500s, when an unknown printer took a galley of type and scrambled it to make a type specimen book. It has survived not only five centuries, but also the leap into electronic typesetting, remaining essentially unchanged.

MT100 family

MT100 family of tester with its ranges of voltages and currents covers test requirement of static parameter from DIEs to complex configuration of modules. MT200 family add dynamic and combined parameters test that reach ranges up to 10 kV and 10 kA in the MT300 family, to satisfy strongest requirements of the market.

MT100S

Parameters

DC: 2800V - 6000A

Power points: 8

Gate points: 24

Sense points: 24


Target

Sub-strate

Power discrete

Power module

Features

Monitor: touchscreen 15"

Dimension(cm): L60 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 1

Static test

IGBT: I CES  V CES  I GES  I CE(sat)  g fs  V GE(th)  
MOSFET: I DSS  V (BR)DSS  I GSS  I DS(on)  g fs  V GS(th)  
DIODE: I GR  V R  V F  
THYRISTOR: G T  V GT  I L  I H
THERMISTOR: V (th)  

MT100S-P

Parameters

DC: 2800V - 6000A

Power points: 8

Gate points: 24

Sense points: 24


Target

Wafer die

Sub-strate

Power discrete

Power module

Features

Monitor: touchscreen 15"

Dimension(cm): L60 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 1

Static test

IGBT: I CES  V CES  I GES  I CE(sat)  g fs  V GE(th)  
MOSFET: I DSS  V (BR)DSS  I GSS  I DS(on)  g fs  V GS(th)  
DIODE: I GR  V R  V F  
THYRISTOR: G T  V GT  I L  I H
THERMISTOR: V (th)  

MT100S-W

Parameters

DC: 2800V - 200A

Power points: 32

Gate points: 32

Sense points: 32


Target

Wafer die

Features

Monitor: touchscreen 15"

Dimension(cm): L60 W80 H180

Interface: CREA™ software plugin

Number of Cabinets: 1

Static test

IGBT: I CES  V CES  I GES  I CE(sat)  g fs  V GE(th)  
MOSFET: I DSS  V (BR)DSS  I GSS  I DS(on)  g fs  V GS(th)  
DIODE: I GR  V R  V F  
THYRISTOR: I GT  V GT  I L  I H
THERMISTOR: V (th)  
SHUNT: V (sh)  

MT100S-HW

Parameters

DC: 10 kV - 1000 A

Power points: 2

Gate points: 2

Sense points: 4


Target

Wafer die

Features

Monitor: touchscreen 15"

Dimension(cm): L60 W80 H180

Interface: CREA™ software plugin

Number of Cabinets: 1

Static test

IGBT: I CES  V CES  I GES  I CE(sat)  g fs  V GE(th)  
MOSFET: I DSS  V (BR)DSS  I GSS  I DS(on)  g fs  V GS(th)  
DIODE: I GR  V R  V F  
THYRISTOR: I GT  V GT  I L  I H
THERMISTOR: V (th)  
SHUNT: V (sh)  

MT100S-HP

Parameters

DC: 10kV - 6000A

Power points: 3

Gate points: 4

Sense points: 8


Target

Sub strate

Power discrete

Power module

Features

Monitor: touchscreen 15"

Dimension(cm): L60 W80 H180

Interface: CREA™ software plugin

Number of Cabinets: 1

Static test

IGBT: I CES  V CES  I GES  I CE(sat)  g fs  V GE(th)  
MOSFET: I DSS  V (BR)DSS  I GSS  I DS(on)  g fs  V GS(th)  
DIODE: I GR  V R  V F  
THYRISTOR: G T  V GT  I L  I H
THERMISTOR: V (th)  
SHUNT: V (sh)  

MT100S

Parameters

DC: 10kV - 6000A

Power points: 3

Gate points: 4

Sense points: 8

Sub strate

Power discrete

Power module

Features

Monitor: touchscreen 15"

Dimension(cm): L60 W80 H180

Interface: CREA™ software plugin

Number of Cabinets: 1

Static test

IGBT: I CES  V CES  I GES  I CE(sat)  g fs  V GE(th)  
MOSFET: I DSS  V (BR)DSS  I GSS  I DS(on)  g fs  V GS(th)
DIODE: I GR  V R  V F  
THYRISTOR: G T  V GT  I L  I H
THERMISTOR: V (th)  
SHUNT: V (sh)  

MT100S-P

Parameters

DC: 2800V - 6000A

Power points: 8

Gate points: 24

Sense points: 24

wafer die

Sub-strate

Power discrete

Power module


Features

Monitor: touchscreen 15"

Dimension(cm): L60 W80 H180

Hipot: High potential test optional

Interface: CREA™ software plugin

Number of Cabinets: 1

Static test

IGBT: I CES  V CES  I GES  I CE(sat)  g fs  V GE(th)  
MOSFET: I DSS  V (BR)DSS  I GSS  I DS(on)  g fs  V GS(th)
DIODE: I GR  V R  V F  
THYRISTOR: G T  V GT  I L  I H
THERMISTOR: V (th)  

MT100S-W

Parameters

DC: 2800V - 200A

Power points: 32

Gate points: 32

Sense points: 32

Wafer die


Features

Monitor: touchscreen 15"

Dimension(cm): L60 W80 H180

Interface: CREA™ software plugin

Number of Cabinets: 1

Static test

IGBT: I CES  V CES  I GES  I CE(sat)  g fs  V GE(th)  
MOSFET: I DSS  V (BR)DSS  I GSS  I DS(on)  g fs  V GS(th)
DIODE: I GR  V R  V F  
THYRISTOR: I GT  V GT  I L  I H
THERMISTOR: V (th)  
SHUNT: V (sh)  

MT100S-HW

Parameters

DC: 10 kV - 1000 A

Power points: 2

Gate points: 2

Sense points: 4

Wafer die


Features

Monitor: touchscreen 15"

Dimension(cm): L60 W80 H180

Interface: CREA™ software plugin

Number of Cabinets: 1

Static test

IGBT: I CES  V CES  I GES  I CE(sat)  g fs  V GE(th)  
MOSFET: I DSS  V (BR)DSS  I GSS  I DS(on)  g fs  V GS(th)
DIODE: I GR  V R  V F  
THYRISTOR: I GT  V GT  I L  I H
THERMISTOR: V (th)  
SHUNT: V (sh)  

MT100S-HP

Parameters

DC: 10kV - 6000A

Power points: 3

Gate points: 4

Sense points: 8

Sub strate

Power discrete

Power module


Features

Monitor: touchscreen 15"

Dimension(cm): L60 W80 H180

Interface: CREA™ software plugin

Number of Cabinets: 1

Static test

IGBT: I CES  V CES  I GES  I CE(sat)  g fs  V GE(th)  
MOSFET: I DSS  V (BR)DSS  I GSS  I DS(on)  g fs  V GS(th)
DIODE: I GR  V R  V F  
THYRISTOR: G T  V GT  I L  I H
THERMISTOR: V (th)  
SHUNT: V (sh)